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Photonics of semiconductor and dielectric nanostructures


Presented by Institute of Electron Physics, National Academy of Sciences of Ukraine


Authors: Yu.M. Azhniuk, A.V. Gomonnai, V.M. Dzhagan, S.Ya. Kuchmiy, A.Y. Nosich, O.L. Stroyuk, G.G. Tarasov, V.O. Yukhymchuk


The study is aimed at elucidation of mechanism of self-induced formation of semiconductor (group IV, III-V) nanostructures, search for mechanisms of interaction between quantum structures and their effect on radiative recombination processes, studies of characteristics of nanoheterostructures, hybrid both in composition and quantum confinement character, investigation of interphase transfer dynamics  and character of secondary photochemical and photocatalytic processes, studies of external effects on various types of nanostructures, building up theoretical models for the analysis of fundamental properties of two-dimensional microlasers of arbitrary shape.


Based on theoretical and experimental studies, the authors have specified mechanisms of quantum confinement effect on photophysical and photochemical processes in nanoparticles. Size-quantum effects of various kinds in photonics of semiconductor nanoparticles were revealed, their effects on the processes of light absorption and emission, dynamics of photogenerated charge carriers, character of photocatalytic and photoelectrochemical processes were analyzed. Fundamentals of a new interdisciplinary field, semiconductor nanophotocatalysis, were established. The process of self-induced formation of nanoislands at the epitaxy of strained (group IV)–(III-V) heterostructures is shown to be described by the Stranski–Krastanov mechanism only in the first approximation. In reality it is more complicated due to intense surface interdiffusion of the components. Interactions in hybrid (zero-two-dimensional) nanostructures are studied. For pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs heterostructures Fermi edge singularities in two-dimensional electron gas emission spectra are studied and their relationship with defects is shown. Electron and phonon states in "dielectric matrix + II-VI quantum dot ensemble" compositesare studied and the nature of radiation induced changes is elucidated. New theoretical models are built for the analysis of fundamental properties of two-dimensional microlasers of arbitrary shape. Method of paired integral equations is used to study the Purcell effect. A number of applications suggested by the authors have no analogues in Ukraine and some of them have technical and economic characteristics better than similar foreign applications.

Number of publications: 261, including 9 books and book chapters, 219 research papers  (214 of them in foreign journals) with total impact factor of 530.89. According to the Scopus database, the overall citation number for the publications of the authors is 3465, h-index is 34; according to the Google Scholar database, the overall citation number is 4318, h-index is 39. The novelty and competitivity конкурентоспроможність of the applications is protected by 31 patents. 18 Cand. Sc. (equivalent to Ph. D.) degrees and 5 Dr. Sc. (equivalent to Hab. Dr.) degrees were accomplished within the topic.